Effects of current spreading on the performance of GaN-based light-emitting diodes

IEEE Transactions on Electron Devices

Volumn 48, Issue 6, 2001, Pages 1065-1069

  Kim, H ^a   Park, S J ^a   Hwang, H ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Current spreading; GaN; Geometrical design; Light emitting diode (LED); Model; Reliability

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENT CONTROL; GALLIUM NITRIDE; SEMICONDUCTOR QUANTUM WELLS; THRESHOLD VOLTAGE;

MULTIPLE QUANTUM WELLS (MQW);

LIGHT EMITTING DIODES;

EID: 0035368029     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925227     Document Type: Article

References (8)

1. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
2. InGaN blue light-emitting diodes with optimized n-GaN layer
3. Modeling of a GaN-based light-emitting diode for uniform current spreading
4. Electromigration-induced failure of GaN multi-quantum well light emitting diode
5. Electromigration failure of contacts and vias in sub-micron integrated circuit metallizations
6. The effect of diode area on the luminescence of InGaN quantum well light emitting diode grown by MOCVD