Charging characteristics of Si nanocrystals embedded within SiO2 in the presence of near-interface oxide traps

Journal of Physics: Conference Series

Volumn 10, Issue 1, 2005, Pages 39-42

  Ioannou Sougleridis, V ^a   Nassiopoulou, A G ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22544444269     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/10/1/010     Document Type: Article

References (8)

1. Tiwari S, Rana F, Hafani H, Hartstein A, Crabbe E and Chan K 1996 Appl. Phys. Lett. 68 1377
2. De Blauwe J 2002 IEEE Trans. Nanotechnol. 1 72
3. Rao R A et al 2004 Solid State Electron. 48 1463
4. Baron T et al 2004 Solid State Electron. 48 1503
5. Normand P et al 2004 Nucl. Instrum. Methods B 216 228
6. Ioannou-Sougleridis V, Nassiopoulou A G and Travlos A 2003 Nanotechnology 14 1174
7. Salonidou A Nassiopoulou A G, K Giannakopoulos, Travlos A, Ioannou-Sougleridis V and Tsoi E 2004 Nanotechnology 15 1233
8. Zvanut M E, Feigl F J and Zook J D 1988 J. Appl. Phys. 64 2221