A porous silicon diode as a source of low-energy free electrons at milli-Kelvin temperatures

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Pilla, S ^a   Naberhuis, B ^a   Goodkind, J ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FREE ELECTRONS; MILLI-KELVIN TEMPERATURE; POROUS SILICON DIODES; QUANTUM COMPUTING SYSTEMS;

CRYSTALLINE MATERIALS; DIELECTRIC FILMS; ELECTRON EMISSION; FREE ELECTRON LASERS; FREE ENERGY; PHOTOLUMINESCENCE; QUANTUM THEORY; THERMAL EFFECTS;

POROUS SILICON;

EID: 23844461864     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1988972     Document Type: Article

References (16)

1. A. G. Cullis and L. T. Canham, Nature (London) 353, 335 (1991).
2. L. Pavesi, J. Appl. Phys. 86, 6474 (1999).
3. M. Ben-Chorin, F. Möller, F. Koch, W. Schirmacher, and M. Eberhard, Phys. Rev. B 51, 2199 (1995).
4. E. Axelrod, A. Givant, J. Shappir, Y. Feldman, and A. Sa'ar, Phys. Rev. B 65, 165429 (2002).
5. M. Ben-Chorin, F. Möller, and F. Koch, J. Appl. Phys. 77, 4482 (1995).
6. N. Koshida, X. Sheng, and T. Komoda, Appl. Surf. Sci. 146, 371 (1999).
7. P. M. Platzman and M. I. Dykman, Science 284, 1967 (1999).
8. A. J. Dahm, J. M. Goodkind, I. Karakurt, and S. Pilla, J. Low Temp. Phys. 284, 1967 (1999).
9. J. M. Goodkind and S. Pilla, Quantum Inf. Comput. 1, 108 (2001).
10. M. Ben-Chorin, F. Möller, and F. Koch, Phys. Rev. B 49, 2981 (1994).
11. P. N. Rao, E. A. Schiff, L. Tsybeskov, and P. Fauchet, Chem. Phys. 284, 129 (2002).
12. D. K. Sharma, K. L. Narasimhan, N. Periasamy, and D. R. Bapat, Phys. Rev. B 44, 12806 (1991).
13. Y. Kanemitsu, H. Funada, and Y. Masumoto, J. Appl. Phys. 71, 300 (1991).
14. M. N. O. Sadiku, Numerical Techniques in Electromagnetics (CRC, Boca Raton, Florida, 2001).
15. T. Komoda, X. Sheng, and N. Koshida, J. Vac. Sci. Technol. B 17, 1076 (1999).
16. H. Mimura, K. Miyajima, and K. Yokoo, J. Vac. Sci. Technol. B 21, 1612 (2003).