Thermal oxidation of porous silicon: Study on structure

Applied Physics Letters

Volumn 86, Issue 4, 2005, Pages

  Pap, A E ^a   Kordas K ^a   Toth G ^a   Levoska, J ^a   Uusimaki A ^a   Vahakangas J ^a   Leppavuori S ^a   George, T F ^b  

^a UNIVERSITY OF OULU   (Finland)

^b UNIVERSITY OF MISSOURI ST LOUIS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EMISSION SCANNING ELECTRON MICROSCOPY (FESEM); LATTICE DEFORMATION; MOLAR DENSITY; VOLUMETRIC GAIN;

DEFORMATION; ELECTROCHEMISTRY; OXIDATION; SCANNING ELECTRON MICROSCOPY; SILICA; STRAIN; SURFACE ROUGHNESS; THERMOMECHANICAL TREATMENT; TRANSMISSION ELECTRON MICROSCOPY; VOLUME MEASUREMENT; X RAY DIFFRACTION;

POROUS SILICON;

EID: 13744257820     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1853519     Document Type: Article

References (26)

1. L. T. Canham, Properties of Porous Silicon (IEE INSPEC, London, 1997).
2. O. Bisi, S. Ossicini, and L. Pavesi, Surf. Sci. Rep. 38, 1 (2000).
3. H. S. Nalwa, Silicon-Based Materials and Devices (Academic, New York, 2001), Vol. 2, pp. 123-192.
4. T. Holec, T. Chovojka, I. Jelínek, J. Jindřich, I. Němec, I. Pelant, J. Valente, and J. Dian, Mater. Sci. Eng., C 19, 251 (2002).
5. A. Foucaran, F. Pascal-Dellannoy, A. Gini, A. Sackda, P. Combette, and A. Boyer, Thin Solid Films 297, 317 (1997).
6. S. Zairi, C. Martelet, N. Jaffrezic-Renault, R. M'Gaïeth, H. Maâref, and R. Lamartine, Thin Solid Films 383, 325 (2001).
7. H. Lüth, M. Thust, A. Steffen, P. Kordos, and M. J. Schöning, Mater. Sci. Eng., B 69-70, 104 (2000).
8. K. Kordás, S. Beke, A. E. Pap, A. Uusimäki, and S. Leppävuori, Opt. Mater. (Amsterdam, Neth.) 25, 257 (2004).
9. G. Lammel, S. Schweizer, and P. Renaud, Sens. Actuators, A 92, 52 (2001).
10. T. M. Benson, H. F. Arrand, P. Sewell, D. Niemeyer, A. Loni, R. J. Bozeat, M. Krüger, R. Arens-Fischer, M. Thönissen, and H. Lüth, Mater. Sci. Eng., B 69-70, 92 (1999).
11. R. J. Martín-Palma, J. M. Martínez-Duart, L. Li, and R. A. Levy, Mater. Sci. Eng., C 19, 359 (2002).
12. K. D. Hirschmann, L. Tsybeskov, S. P. Duttagupta, and P. M. Fauchet, Nature (London) 409, 338 (1996).
13. K. Kordás, J. Remes, S. Beke, T. Hu, and S. Leppävuori, Appl. Surf. Sci. 178, 190 (2001).
14. H. Koyama and P. M. Fauchet, Appl. Phys: Lett. 77, 2316 (2000).
15. R. J. Martína-Palma, L. Vázquez, P. Herrero, J. M. Martíaez-Duart, M. Schell, and S. Schaefer, Opt. Mater. (Amsterdam, Neth.) 17, 75 (2001).
16. E. A. Petrova, K. N. Bogoslovskaya, L. A. Blagurov, and G. I. Kochordaze, Mater. Sci. Eng., B 69-70, 152 (2000).
17. J. M. Lauerhaas and M. J. Sailor, Science 261, 1567 (1993).
18. I. M. Young, M. I. J. Beale, and J. D. Benjamin, Appl. Phys. Lett. 46, 1133 (1985).
19. K. Barla, R. Herino, and G. Bomchil, J. Appl. Phys. 59, 439 (1986).
20. L. Nánai, R. Vajtai, and T. F. George, Infrared Phys. Technol. 36, 281 (1995).
21. L. Nánai and T. F. George, J. Mater. Res. 12, 283 (1997).
22. L. Nánai, R. Vajtai, and T. F. George, Thin Solid Films 298, 160 (1997).
23. A. E. Pap, K. Kordás, T. F. George, and S. Leppävuori, J. Phys. Chem. B 108, 12744 (2004).
24. S. Stolyarova, A. El-Bahar, and Y. Nemirovsky, J. Cryst. Growth 237-239, 1920 (2002).
25. H. Holloway, K. C. Hass, M. A. Tamor, T. R. Anthony, and W. F. Banholzer, Phys. Rev. B 44, 7123 (1991).
26. Y. Arita and K. Kuranari, Jpn. J. Appl. Phys., Part 1 36, 1040 (1997).