Dependence of the doping efficiency on material composition in n-type a-SiOx:H

Journal of Non-Crystalline Solids

Volumn 299-302, Issue PART 1, 2002, Pages 579-584

  Janotta, A ^a   Janssen, R ^a   Schmidt, M ^a   Graf, T ^a   Gorgens L ^a   Hammerl, C ^a   Schreiber, S ^a   Dollinger, G ^a   Bergmaier, A ^a   Stritzker, B ^a   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; ENERGY GAP; HYDROGENATION; OXYGEN; PHOSPHORUS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING;

CO-ORDINATION NUMBERS; DOPING EFFICIENCIES;

AMORPHOUS SILICON;

EID: 6444245856     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(01)00963-2     Document Type: Conference Paper

References (13)