Effect of donor-complex-defect-induced dipole field on InAs/GaAs quantum dot infrared photodetector activation energy

Applied Physics Letters

Volumn 90, Issue 23, 2007, Pages

  Zhao, Z Y ^a   Yi, C ^a   Lantz, K R ^a   Stiff Roberts, A D ^a  

^a USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DONOR COMPLEX DEFECT (DX); DOPANT INCORPORATION; PHOTOCAPACITANCE QUENCHING;

ACTIVATION ENERGY; DOPING (ADDITIVES); INDIUM ARSENIDE; QUENCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

INFRARED DETECTORS;

EID: 34250752844     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2747199     Document Type: Article

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