A study on doping density in InAs/GaAs quantum dot infrared photodetector

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 8 A, 2004, Pages 5199-5203

  Lee, Uk Hyun ^a   Kang, Yong Hoon ^a   Oum, Joon Ho ^a   Lee, Sang Jun ^b   Kim, Moondok ^c   Noh, Sam Kyu ^b   Yu Jang, Dong ^a,b,c,d   Lee, Donghan ^c   Kim, Hyung Seok ^d   Park, Chan Hyung ^d   Hong, Songcheol ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Chungnam National University   (South Korea)

^d Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Doping density; Operation voltage; Quantum dot infrared photodetector (QDIP)

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GROUND STATE; INFRARED DETECTORS; MONOCHROMATORS; PHOTODETECTORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

DARK CURRENT LEVEL; DOPING DENSITY; OPERATION VOLATGE; QUANTUM DOT INFRARED PHOTODETECTORS (QDIP);

SEMICONDUCTOR QUANTUM DOTS;

EID: 6344231711     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.5199     Document Type: Article

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