Electrical properties of InAs/InGaAs/GaAs quantum-dot infrared photodetectors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 6 B, 2006, Pages 5575-5577

  Kim, Jin Soak ^a   Kim, Eun Kyu ^a   Choi, Won Jun ^b   Song, Jin Dong ^b   Lee, Jung Il ^b  

^a Hanyang University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Deep level transient spectroscopy; Energy level; InAs GaAs; Infrared photodetector; Quantum dot

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; PHOTODETECTORS; POINT DEFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CAPACITANCE-VOLTAGE; ENERGY LEVEL; INFRARED PHOTODETECTOR; QUANTUM DOT-INFRARED PHOTODETECTOR (QDIP);

SEMICONDUCTOR QUANTUM DOTS;

EID: 33745674058     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.5575     Document Type: Review

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