Doping effect on dark currents in In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

Applied Physics Letters

Volumn 89, Issue 11, 2006, Pages

  Drozdowicz Tomsia, K ^a   Goldys, E M ^a   Fu, Lan ^b   Jagadish, C ^b  

^a MACQUARIE UNIVERSITY   (Australia)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); INFRARED DEVICES; RESONANT TUNNELING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SILICON;

DARK CURRENTS; DEFECT DENSITY; METAL ORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM DOT INFRARED PHOTODETECTORS;

PHOTODETECTORS;

EID: 33748689557     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2354432     Document Type: Article

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