Contribution of Field-Assisted Tunneling Emission to Dark Current in InAs-GaAs Quantum Dot Infrared Photodetectors

IEEE Photonics Technology Letters

Volumn 16, Issue 3, 2004, Pages 867-869

  Stiff Roberts, A D ^a   Su, X H ^a   Chakrabarti, S ^a   Bhattacharya, P ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Dark current; Gallium compounds; Indium compounds; Infrared detectors; Quantum dots (QD)

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TUNNELING; INFRARED RADIATION; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS; THERMIONIC EMISSION;

DARK CURRENTS; SURFACE DENSITY;

PHOTODETECTORS;

EID: 1642602731     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.823690     Document Type: Article

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