Coulomb interaction between carriers localized in InAs/GaAs quantum dots and on point defects

Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1619-1624

  Sobolev, M M ^a   Kovsh, A R ^a   Ustinov, V M ^a   Egorov, A Yu ^a   Zhukov, A E ^a   Maximov, M V ^a   Ledentsov, N N ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Defects; DLTS; Quantum dots

Indexed keywords

ANNEALING; CAPACITANCE; CHARGE CARRIERS; COOLING; DEEP LEVEL TRANSIENT SPECTROSCOPY; POINT DEFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS;

COULOMB INTERACTION; INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031340108     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.1619     Document Type: Article

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