DX- center formation in planar-doped GaAs:Si in strong electric fields

Journal of Experimental and Theoretical Physics

Volumn 99, Issue 3, 2004, Pages 574-584

  Asche, M ^a   Sarbey, O G ^b  

^a National Academy of Sciences of Ukraine ^*  (Germany)

^b INSTITUTE OF PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; MOLECULAR VIBRATIONS; QUANTUM THEORY;

CENTER FORMATION; CURRENT DECAY; HOT ELECTRONS; QUANTUM CONFINEMENT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33747605597     PISSN: 10637761     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1809687     Document Type: Article

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