Uniformly doped InAs/GaAs quantum-dot infrared photodetector structures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 1132-1135

  Pal, D ^a   Towe, E ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; PHOTOLUMINESCENCE MEASUREMENTS; PHOTORESPONSE SPECTRUM; QUANTUM-DOT INFRARED PHOTODETECTORS (QDIP);

BAND STRUCTURE; CARRIER CONCENTRATION; INFRARED DETECTORS; INFRARED RADIATION; PHOTODETECTORS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; WETTING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 31144436684     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1881572     Document Type: Conference Paper

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