Dynamic response of carbon nanotube field-effect transistors analyzed by S-parameters measurement

Materials Science and Engineering: B

Volumn 135, Issue 3, 2006, Pages 294-296

  Bethoux, J M ^a   Happy, H ^a   Dambrine, G ^a   Derycke, V ^b   Goffman, M ^b   Bourgoin, J P ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b SERVICE DE PHYSIQUE DE L ETAT CONDENSÉ   (France)

Author keywords

Carbon nanotube field effect transistor (CN FET); GHz; High frequency

Indexed keywords

ASSEMBLY; DYNAMIC RESPONSE; FIELD EFFECT TRANSISTORS; PARAMETER ESTIMATION;

BACK GATE; CURRENT GAIN; HIGH FREQUENCY; MAXIMUM STABLE GAIN (MSG);

CARBON NANOTUBES;

EID: 33751200677     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.08.022     Document Type: Article

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