High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 691-694

  Huo, X ^a   Zhang, M ^a   Chan, Philip C H ^a   Liang, Q ^a   Tang, Z K ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSTS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); OXIDES; SCANNING ELECTRON MICROSCOPY; VOLTAGE CONTROL; CARBON NANOTUBES; PARAMETER ESTIMATION; SCATTERING PARAMETERS; YARN;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS (CNFET); GATE BIAS VOLTAGE; MEASUREMENT NOISE; SEMI-CONDUCTIVE NANOTUBES;

CARBON NANOTUBES; CARBON NANOTUBE FIELD EFFECT TRANSISTORS;

BACK GATES; FREQUENCY TRANSMISSIONS; GATE BIAS VOLTAGE; HIGH FREQUENCY HF; LUMPED-ELEMENT MODELING; S-PARAMETER CHARACTERIZATION; TRANSMISSION PROPERTY;

EID: 21644460518     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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2. P. Avouris, J. Appenzeller, V. Derycke, R. Martel, and S. Wind, "Carbon nanotube electronics," IEEE IEDM Technical Digest, San Francisco, pp. 281-284, 2002.
3. A. Javey, Qian Wang, Woong kim, and Hongjie Dai "Advancements in complementary carbon nanotube field-effect transistors," IEEE IEDM Technical Digest, Washington DC, pp. 741-744, 2003.
4. D. J. Frank, and J. Appenzeller, "High-frequency response in carbon nanotube field-effect transistors," IEEE Electron Device Lett., Vol. 25, No. 1, pp. 34-36, 2004.
5. ICCAP User's manual, Hewlett-Packard, Semiconductor Systems Center, CA.