Chemical optimization of self-assembled carbon nanotube transistors

Nano Letters

Volumn 5, Issue 3, 2005, Pages 451-455

  Auvray, Stéphane ^a   Derycke, Vincent ^a   Goffman, Marcelo ^a   Filoramo, Arianna ^a   Jost, Oliver ^b   Bourgoin, Jean Philippe ^a  

^a CEA SACLAY   (France)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMINES; ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CHEMICAL SENSORS; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRODES; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); OPTIMIZATION; OXIDATION; SCHOTTKY BARRIER DIODES; SELF ASSEMBLY; SILANES; TUNING;

AMINOSILANES; CHEMICAL TUNING; SELF-ASSEMBLED NANOTUBE TRANSISTORS; SINGLE WALLED CARBON NANOTUBE (SWNT);

CARBON NANOTUBES;

CARBON NANOTUBE; ETHYLAMINE; TRIETHYLAMINE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; REPRODUCIBILITY; SEMICONDUCTOR; SENSITIVITY AND SPECIFICITY; TRANSDUCER; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; ETHYLAMINES; NANOTECHNOLOGY; NANOTUBES, CARBON; PARTICLE SIZE; REPRODUCIBILITY OF RESULTS; SENSITIVITY AND SPECIFICITY; TRANSDUCERS; TRANSISTORS;

EID: 16244399477     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl048032y     Document Type: Article

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32. Ds = -1 V bias).