Resolution limits in 130 nm and 90 nm CMOS technologies for analog front- End applications

IEEE Transactions on Nuclear Science

Volumn 54, Issue 3, 2007, Pages 531-537

  Manghisoni, M ^b,c   Ratti, L ^a,c,d   Re, V ^b,c   Speziali, V ^a,c,d   Traversi, G ^b,c  

^a IEEE

^b UNIVERSITY OF BERGAMO   (Italy)

^c INFN SEZIONE DI PAVIA   (Italy)

^d UNIVERSITY OF PAVIA   (Italy)

Author keywords

1 f noise; Channel thermal noise; CMOS; Deep submicron; Front end electronics; Gate leakage current

Indexed keywords

LEAKAGE CURRENTS; MICROPROCESSOR CHIPS; SIGNAL ANALYSIS; SIGNAL NOISE MEASUREMENT;

CHANNEL THERMAL NOISE; DETECTION SYSTEMS; GATE LEAKAGE CURRENT; QUARTER MICRON;

CMOS INTEGRATED CIRCUITS;

EID: 34250746290     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.896213     Document Type: Article

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