Explaining 'voltage-driven' breakdown statistics by accurately modeling leakage current increase in thin SiON and SiO2/high-k stacks

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 82-89

  Degraeve, R ^a   Roussel, Ph ^a   Cho, M ^a,b   Kaczer, B ^a   Kauerauf, T ^a,c   Crupi, F ^d   Groeseneken, G ^a,c  

^a IMEC   (Belgium)

^b Seoul National University   (South Korea)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d UNIVERSITY OF CALABRIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DISTRIBUTION PARAMETERS; STRESS-INDUCED LEAKAGE CURRENT;

COMPUTER SIMULATION; LEAKAGE CURRENTS; OXIDE FILMS; SEMICONDUCTING SILICON; SILICA;

ELECTRIC BREAKDOWN;

EID: 34250700041     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251195     Document Type: Conference Paper

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