Voltage-driven distribution of gate oxide breakdown

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 582-583

  Hiraiwa, A ^a   Sakai, S ^a   Ishikawa, D ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; OXIDES; RELIABILITY;

GATE OXIDE BREAKDOWN;

GATES (TRANSISTOR);

EID: 0037634330     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. J. H. Stathis, J. Appl. Phys. 86, 5757 (1999).
2. J. S. Suehle, IEEE Trans. Electron Devices 49, 958 (2002).
3. A. Hiraiwa, S. Sakai, D. Ishikawa, and M. Nakazawa, J. Appl. Phys. 91, 6571(2002).
4. M. A. Alam, J. Bude and A. Ghetti, IRPS, p.21 (2000).