Fabrication and analysis of GaN nanorods grown by MBE

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2357-2360

  Sanford, N A ^a   Robins, L H ^a   Gray, M H ^a   Kang, Y S ^a   Van Nostrand, J E ^b   Stutz, C ^b   Cortez, R ^b   Davydov, A V ^a   Shapiro, A ^a   Levin, I ^a   Roshko, A ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

NANORODS; NEAR-BANDGAP EMISSION;

GALLIUM NITRIDE;

EID: 27344443259     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461602     Document Type: Conference Paper

References (7)

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