Impact of (111)-oriented SrRuO3/Pt tailored electrode for highly reproducible preparation of metal organic chemical vapour deposited Pb(Zr,Ti)O3 films for high density ferroelectric random access memory applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2139-2142

  Menou, Nicolas ^a   Kuwabara, Hiroki ^a   Funakubo, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

FeRAM; Ferroelectricity; MOCVD; PZT; SrRuO3

Indexed keywords

ELECTRODES; FERROELECTRICITY; LEAD COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RANDOM ACCESS STORAGE; STRONTIUM COMPOUNDS;

FERROELECTRIC RANDOM ACCESS MEMORY (FERAM); PROCESS WINDOW;

THIN FILMS;

EID: 34250666470     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2139     Document Type: Article

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