Preparation of Pb(Zrx, Ti1-x)O3 thin films by source gas pulse-introduced metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 6 A, 2001, Pages 4126-4130

  Aratani, M ^a   Nagashima, K ^a   Funakubo, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Continuous MOCVD; Ferroelectricity; Film thickness; Leakage current density; Pb(Zr, Ti)O3; Pulse MOCVD; Relative dielectric constant

Indexed keywords

COERCIVE FORCE; CRYSTAL ORIENTATION; CURRENT DENSITY; FILM GROWTH; FILM PREPARATION; LEAD COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION; SUBSTRATES; SURFACE ROUGHNESS; THIN FILMS;

COERCIVE FIELD; CONTINUOUS SOURCE GAS INTRODUCTION MOCVD; LEAD ZIRCONIUM TITANATE; LEAKAGE CURRENT DENSITY; PULSED GAS INTRODUCTION MOCVD; REMANENT POLARIZATION;

SOLID STATE PHYSICS;

EID: 0035359163     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.4126     Document Type: Article

References (20)