Current development status and future challenges of ferroelectric random access memory technologies

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3189-3193

  Lee, Sungyung ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

2 D stack ferroelectric MIM capacitor; 3 D ferroelectric MIM capacitor; Ferroelectric capacitor etching; MOCVD PZT; SrRuO3 electrode

Indexed keywords

CAPACITOR STORAGE; FERROELECTRIC MATERIALS; HYSTERESIS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIM DEVICES; TRANSISTORS;

2-D STACK FERROELECTRIC MIM CAPACITORS; 3-D FERROELECTRIC MIM CAPACITORS; FERROELECTRIC CAPACITOR ETCHING; MOCVD PZT; SRRUO3 ELECTRODES;

RANDOM ACCESS STORAGE;

EID: 33646924576     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3189     Document Type: Article

References (5)

1. K. Kim: plenary talk, 2004 ISIF, Gyeongju, Korea, 2004.
2. H. H. Kim, Y. J. Song, S. Y. Lee, H. J. Joo, N. W. Jang, D. J. Jung, Y. S. Park, S. O. Park, K. M. Lee, S. H. Joo, S. W. Lee, S. D. Nam and K. Kim: Symp. VLSI Technology Dig., 2002, p. 210.
3. J. H. Park, H. J. Joo, S. K. Kang, Y. M. Kang, H. S. Rhie, B. J. Koo, S. Y. Lee, B. J. Bae, J. E. Lim, H. S. Jeong and K. Kim: IEDM Tech. Dig., 2004, p. 594.
4. H. J. Joo, Y. J. Song, H. H. Kim, S. K. Kang, J. H. Park, Y. M. Kang, S. Y. Lee, H. S. Jeong and K. Kim: Symp. VLSI Technology Dig., 2004, p. 148.
5. Y. M. Kang, J. H. Kim, H. J. Joo, S. K. Kang, H. S. Rhie, J. H. Park, D. Y. Choi, S. G. Oh, B. J. Koo, S. Y. Lee, H. S. Jeong and K. Kim: Symp. VLSI Technology Dig., 2005, p. 102.