Effects of rapid thermal annealing on the properties of GaNx As1-x

Journal of Applied Physics

Volumn 101, Issue 11, 2007, Pages

  Liu, Z L ^a   Chen, P P ^a   Wang, C ^a   Li, T X ^a   Cui, H Y ^a   Li, Y J ^a   Chen, X S ^a   Lu, W ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE SPECTROSCOPY; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; VALENCE BANDS; X RAY DIFFRACTION;

NITROGEN COMPOSITION; STRAIN RELAXATION MODELS; VALENCE BAND SPLITTING ENERGY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 34250628897     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2736282     Document Type: Article

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