Determination of strain-induced valence-band splitting in GaAsN thin films from circularly polarized photoluminescence

Journal of Applied Physics

Volumn 98, Issue 1, 2005, Pages

  Egorov, A Yu ^a   Kalevich, V K ^a   Afanasiev, M M ^a   Shiryaev, A Yu ^a   Ustinov, V M ^a   Ikezawa, M ^b   Masumoto, Y ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANGULAR MOMENTUM; CIRCULAR POLARIZATION; SPIN POLARIZATION; VALENCE-BAND SPLITTING;

GALLIUM NITRIDE; LIGHT POLARIZATION; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

THIN FILMS;

EID: 22944454884     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1949718     Document Type: Article

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