Experimental observation of splitting of the light and heavy hole bands in elastically strained GaAsN

Semiconductors

Volumn 36, Issue 9, 2002, Pages 981-984

  Egorov, A Yu ^a   Semenova, E S ^a   Ustinov, V M ^a   Hong, Y G ^b   Tu, C ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036752250     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1507277     Document Type: Article

References (4)

1. V.M. Ustinov and A.E. Zhukov, Semicond. Sci. Technol. 15, R41 (2000).
2. B. Borchert, A.Yu. Egorov, S. Illek, et al., Electron. Lett. 35, 2204 (1999).
3. M. Kondow, T. Kitatani, S. Nakatsuka, et al., IEEE J. Sel. Top. Quantum Electron. 3, 719 (1997).
4. M.P.C.M. Krijn, Semicond. Sci. Technol. 6, 27 (1991).