Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 288, Issue 1, 2006, Pages 44-48

  Liu, H F ^a   Xiang, N ^a   Chua, S J ^a,b   Tripathy, S ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

A1. Annealing; A3. MBE; B1. GaNAs

Indexed keywords

ANNEALING; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; NITROGEN; PLASMAS; RAPID THERMAL ANNEALING; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

GANAS; HIGH-RESOLUTION X-RAY DIFFRACTION (HRXRD); RAMAN INTENSITY; VIBRATION MODES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 31644448002     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.045     Document Type: Conference Paper

References (12)

1. E. O'Reilly, N. Balkan, I.A. Buyanova, X. Marie, and H. Griechert IEE Proc. Optoelectron. 151 2004 245
2. W.J. Fan, S.F. Yoon, T.K. Ng, S.Z. Wang, W.K. Loke, R. Liu, and A. Wee Appl. Phys. Lett. 80 2002 4136
3. W. Li, M. Pessa, and J. Likonen Appl. Phys. Lett. 78 2001 2864
4. T. Ahlgren, E. Vainonen-Ahlgren, J. Likonen, W. Li, and M. Pessa Appl. Phys. Lett. 80 2002 2314
5. J. S. Wang, A. R. Kovsh, L. Wei, J. Y. Chi, Y. T. Wu, P. Y. Wang,V. M. Ustinov, Nanotechnology 12 (2001) 430.
6. F.H. Pollak, Strained-Layer Superlattices: Physics, in: T. P. Pearsall (Ed.), (R.K. Willardson, A. C. Beer (series Ed.), Semiconductors and Semimetals, vol. 32, 1990, p. 17.
7. T. Prokofyeva, T. Sauncy, M. Seon, M. Holtz, Y. Qiu, S. Nikishin, and H. Temkin Appl. Phys. Lett. 73 1998 1409
8. A.M. Mintairov, P.A. Blagonv, V.G. Melehin, N.N. Faleev, J.L. Merz, Y. Qiu, S.A. Nikishin, and H. Temkin Phys. Rev. B 56 1997 15836
9. M.J. Seong, M.C. Hanna, and Mascarenhas Appl. Phys. Lett. 79 2001 3974
10. S.B. Zhang, and S.H. Wei Phys. Rev. Lett. 86 2001 1789
11. N.F. Chen, Y. Wang, H. He, and L. Lin Phys. Rev. B 54 1996 8516
12. K. Uesugi, N. Morooka, and I. Suemune Appl. Phys. Lett. 74 1999 1254