Temperature dependence of photoluminescence and photoreflectance spectra of dilute GaAsN alloys

Applied Physics Letters

Volumn 86, Issue 12, 2005, Pages 1-3

  Plaza, J ^a   Castano J L ^a   Garcia B J ^a   Carrre H ^b   Bedel Pereira, E ^b  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; ENERGY GAP; EPITAXIAL GROWTH; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; TENSILE STRESS;

BAND GAPS; MATRIX ELEMENT COUPLING; PHOTOREFLECTANCE SPECTRA; SIGNAL RECORDING;

GALLIUM ALLOYS;

EID: 17944371486     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1891293     Document Type: Article

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