Raman scattering probe of anharmonic effects due to temperature and compositional disorder in Ga N x As 1-x

Journal of Applied Physics

Volumn 99, Issue 10, 2006, Pages

  Liu, H F ^a   Xiang, N ^a   Tripathy, S ^b   Chua, S J ^a,b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANHARMONIC EFFECTS; PHONON LINEWIDTH; SPATIAL CORRELATION MODEL;

GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; PHONONS; RAMAN SCATTERING; VIBRATIONS (MECHANICAL);

GALLIUM NITRIDE;

EID: 33744829010     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2203393     Document Type: Article

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