Effects of rapid thermal annealing on the optical properties of GaNxAs1-x/GaAs single quantum well structure grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 87, Issue 1, 2000, Pages 245-248

  Li, L H ^a   Pan, Z P ^a   Zhang, W ^a   Lin, Y W ^a   Zhou, Z Q ^a   Wu, R H ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001609353     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371852     Document Type: Article

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