Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates

Journal of Applied Physics

Volumn 97, Issue 11, 2005, Pages

  Bai, J ^a   Dudley, M ^a   Chen, L ^b   Skromme, B J ^b   Wagner, B ^c   Davis, R F ^c   Chowdhury, U ^d   Dupuis, R D ^d  

^a Stony Brook University   (United States)

^b Arizona State University   (United States)

^c North Carolina State University   (United States)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MISORIENTED SUBSTRATES; PRISMATUC FAULTS; STAIR-ROD DISLOCATIONS; STRUCTURAL DEFECTS;

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; LUMINESCENCE; SAPPHIRE; SILICON CARBIDE; STACKING FAULTS; SUBSTRATES; TEMPERATURE DISTRIBUTION; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 20544448888     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1914956     Document Type: Article

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