Manifestation of edge dislocations in photoluminescence of GaN

Physica B: Condensed Matter

Volumn 367, Issue 1-4, 2005, Pages 35-39

  Reshchikov, M A ^a   Huang, D ^a,d   He, L ^a   Morkoc H ^a   Jasinski, J ^b,e   Liliental Weber, Z ^b   Park, S S ^c   Lee, K Y ^c  

^a Virginia Commonwealth University   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d FUDAN UNIVERSITY   (China)

^e UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Dislocations; GaN; Photoluminescence

Indexed keywords

EDGE DISLOCATIONS; EDGE THREADING; VAPOR-PHASE EPITAXY;

DISLOCATIONS (CRYSTALS); EXCITONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POINT DEFECTS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 28944439403     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.05.044     Document Type: Article

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27. 7 lines were buried under the background emission.