Controlled enhancement of the electron field-effect mobility of F 16CuPc thin-film transistors by use of functionalized SiO2 substrates

Applied Physics Letters

Volumn 87, Issue 18, 2005, Pages 1-3

  De Oteyza, Dimas G ^a   Barrena, Esther ^a   Ossó, J Oriol ^b   Dosch, Helmut ^a,c   Meyer, Stephan ^c   Pflaum, Jens ^c  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

^c UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; GRAIN BOUNDARIES; REDUCTION; SILICON COMPOUNDS; SURFACE PROPERTIES; THIN FILM TRANSISTORS;

COPPER-HEXADECAFLUOROPHTHALOCYANINE (F16 CUPC); FIELD-EFFECT MOBILITY; OCTADECYLTRIMETHOXISILANE (OTMS);

ELECTRON MOBILITY;

EID: 27344456192     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2117622     Document Type: Article

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