High performance tantalum carbide metal gate stacks for nMOSFET application

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 31-34

  Hou, Y T ^a   Yen, F Y ^a   Hsu, P F ^a   Chang, V S ^a   Lim, P S ^a   Hung, C L ^a   Yao, L G ^a   Jiang, J C ^a   Lin, H J ^a   Jin, Y ^a   Jang, S M ^a   Tao, H J ^a   Chen, S C ^a   Liang, M S ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRON MOBILITY; HAFNIUM COMPOUNDS; MOSFET DEVICES; TANTALUM CARBIDE; THRESHOLD VOLTAGE;

EFFECTIVE WORK FUNCTION (EWF); METAL GATE STACKS; METAL INDUCED GAP STATES (MIGS); THRESHOLD VOLTAGE STABILITY;

GATES (TRANSISTOR);

EID: 33847704506     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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