Dependence of electrical and structural properties on film thickness of undoped ZnO thin films prepared by plasma-assisted electron beam deposition

Superlattices and Microstructures

Volumn 39, Issue 1-4, 2006, Pages 306-313

  Kishimoto, S ^a   Yamamoto, T ^a   Nakagawa, Y ^a   Ikeda, K ^a   Makino, H ^a   Yamada, T ^a  

^a KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Atomic force microscopy; Hall effect measurement; Plasma assist electron beam deposition; Polycrystalline undoped ZnO films; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; HALL EFFECT; SEMICONDUCTOR DOPING; STRUCTURAL PANELS; X RAY DIFFRACTION; ZINC OXIDE;

HALL EFFECT MEASUREMENT; HALL MOBILITY; PLASMA-ASSIST ELECTRON-BEAM DEPOSITION; POLYCRYSTALLINE UNDOPED ZNO FILMS;

THIN FILMS;

EID: 29344469106     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2005.08.069     Document Type: Article

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