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Volumn 74, Issue 15, 1999, Pages 2230-2232
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1.4× efficiency improvement in transparent-substrate (AlxGa1-x)0.5In0.5P light-emitting diodes with thin (≤2000 Å) active regions
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER MOBILITY;
LEAKAGE CURRENTS;
LIGHT REFRACTION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
QUANTUM EFFICIENCY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DEVICE MANUFACTURE;
ALUMINUM GALLIUM INDIUM PHOSPHIDE;
ELECTRON DIFFUSIVE LEAKAGE CURRENT;
GALLIUM PHOSPHIDE;
LIGHT EMITTING DIODES;
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EID: 0032622107
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.123810 Document Type: Article |
Times cited : (49)
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References (10)
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