The roles of hydrophobic group on the surface of ultra low dielectric constant porous silica film during thermal treatment

Thin Solid Films

Volumn 515, Issue 18, 2007, Pages 7275-7280

  Luo, Jen Tsung ^a   Wu, Wen Fa ^b   Wen, Hua Chiang ^a   Wan, Ben Zu ^c   Chang, Yu Ming ^a   Chou, Chang Pin ^a   Chen, Jun Ming ^d   Chen, Wu Nan ^d  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^d SHU TE UNIVERSITY   (Taiwan)

Author keywords

Dielectric constant; HMDS; Porous silica; Thermal treatment

Indexed keywords

CURRENT DENSITY; HEAT TREATMENT; HYDROPHOBICITY; LEAKAGE CURRENTS; PERMITTIVITY; POROUS MATERIALS; THIN FILMS;

HEXAMETHYLDISILAZANE (HMDS); PERMITTIVITY PROPERTIES; POROUS SILICA; SURFACE MODIFICATION AGENTS;

SILICA;

EID: 34249106714     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.03.028     Document Type: Article

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