Heat, moisture and chemical resistance on low dielectric constant (low-k) film using Diethoxymethylsilane (DEMS) prepared by plasma enhanced chemical vapor deposition

Surface and Coatings Technology

Volumn 200, Issue 10 SPEC. ISS., 2006, Pages 3127-3133

  Cheng, Y L ^a   Wang, Y L ^a   Lan, J K ^a   Hwang, G J ^a   O'Neil, M L ^b   Chen, C F ^c  

^a NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^b AIR PRODUCTS AND CHEMICALS INC   (United States)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Diethoxymethylsilane; Low dielectric constant; Organosilicate glass; Thermal stability

Indexed keywords

CHEMICAL BONDS; CHEMICAL RESISTANCE; CROSSLINKING; DEGRADATION; FILMS; HEAT RESISTANCE; MOISTURE; PERMITTIVITY;

DIETHOXYMETHYLSILANE; LOW DIELECTRIC CONSTANT; ORGANOSILICATE GLASS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

CHEMICAL BONDS; CHEMICAL RESISTANCE; CROSSLINKING; DEGRADATION; FILMS; HEAT RESISTANCE; MOISTURE; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 31644435074     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2005.07.014     Document Type: Article

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