Effect of silylation on triethoxyfluorosilane xerogel films by means of atmospheric pressure drying

Thin Solid Films

Volumn 471, Issue 1-2, 2005, Pages 145-153

  Orozco Teran, R A ^a   German, B P ^a   Mueller, D W ^b   Baklanov, M R ^c   Reidy, R F ^a  

^a Center for Advanced Research and Technology   (United States)

^b UNIVERSITY OF NORTH TEXAS   (United States)

^c IMEC   (Belgium)

Author keywords

Dielectric; Low k

Indexed keywords

ATMOSPHERIC PRESSURE; DIELECTRIC MATERIALS; DRYING; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROPHOBICITY; REFRACTIVE INDEX;

CAPILLARY PRESSURE; FILM THICKNESS; LOW-K; SURFACE AREAS;

SILANES;

EID: 10644284066     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.005     Document Type: Article

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