Dielectric constant and stability of fluorine doped PECVD silicon oxide thin films

Thin Solid Films

Volumn 283, Issue 1-2, 1996, Pages 30-36

  Mizuno, S ^a,b   Verma, A ^a   Tran, H ^a   Lee, P ^a   Nguyen, B ^a  

^a APPLIED MATERIALS INC   (United States)

^b Technology Center   (Japan)

Author keywords

Fluorosilicate glass; Intermetal dielectrics; Triethoxyfluorosilane

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; DOPING (ADDITIVES); FILM GROWTH; FLUORINE COMPOUNDS; GLASS; PERMITTIVITY; PLASMA APPLICATIONS; SILANES; SILICA; STABILITY;

FLUOROSILICATE GLASS; INTERMETAL DIELECTRICS; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; TRIETHOXYFLUOROSILANE;

THIN FILMS;

EID: 0030233055     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08260-3     Document Type: Article

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