Influence of exciton localization on the quantum efficiency of GaN/(In,Ga)N multiple quantum wells grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 81, Issue 4, 2002, Pages 673-675

  Dhar, S ^a   Jahn, U ^a   Brandt, O ^a   Waltereit, P ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE SPECTROSCOPY; COUPLED RATE EQUATIONS; EXCITATION DENSITY; EXCITON LOCALIZATION; INTERNAL QUANTUM EFFICIENCY; MULTIPLE QUANTUM-WELL STRUCTURES; POLARIZATION FIELD; RATE-EQUATION MODELS; TRANSITION ENERGY;

EXCITONS; GALLIUM; POISSON EQUATION; SEMICONDUCTOR COUNTERS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 79956047156     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1493237     Document Type: Article

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