A high-performance body-tied FinFET Bandgap Engineered SONOS (BE-SONOS) for NAND-type flash memory

IEEE Electron Device Letters

Volumn 28, Issue 5, 2007, Pages 443-445

  Hsu, Tzu Hsuan ^a,b   Lue, Hang Ting ^a   King, Ya Chin ^b   Hsieh, Jung Yu ^a   Lai, Erh Kun ^a   Hsieh, Kuang Yeu ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Bandgap engineered (BE) SONOS; Body tied FinFET; NAND flash; Nitride trapping memory

Indexed keywords

CHARGE TRAPPING; ENERGY GAP; FIELD EFFECT TRANSISTORS; NAND CIRCUITS; NITRIDES;

FIN WIDTH; FLOATING-GATE DEVICE; NITRIDE TRAPPING MEMORY;

FLASH MEMORY;

EID: 34247638062     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.895421     Document Type: Article

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