Novel soft erase and re-fill methods for a P+-poly gate nitride-trapping non-volatile memory device with excellent endurance and retention properties

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 168-174

  Lue, Hang Ting ^a   Shih, Yen Hao ^a   Hsieh, Kuang Yeu ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL ANNEALING; FOWLER-NORDHEIM (FN) CHANNELS; GATE INJECTION; RE-FILL METHODS;

ANNEALING; DATA REDUCTION; GATES (TRANSISTOR); NITRIDES; PROBLEM SOLVING;

NONVOLATILE STORAGE;

EID: 23844527707     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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