Effect of high temperature-pressure on nitrogen-doped Czochralski silicon

Journal of Physics Condensed Matter

Volumn 16, Issue 3, 2004, Pages 473-481

  Misiuk, Andrzej ^a   Surma, Barbara ^a   Yang, Deren ^b   Shalimov, Artem ^c  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b ZHEJIANG UNIVERSITY   (China)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; HIGH PRESSURE EFFECTS; HIGH TEMPERATURE EFFECTS; HYDROSTATIC PRESSURE; INFRARED SPECTROSCOPY; NITROGEN; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); X RAY SPECTROSCOPY;

INFRARED ABSORPTION METHOD; OXYGEN ADMIXTURE; THERMAL DONORS;

SILICON;

EID: 0442326666     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/3/023     Document Type: Article

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