Effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 373-378

  Cui, Can ^a   Yang, Deren ^a   Yu, Xuegong ^a   Ma, Xiangyang ^a   Li, Liben ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Lifetime; Nitrogen; Passivation; Silicon

Indexed keywords

ANNEALING; CHARGE CARRIERS; PASSIVATION; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DOPING; SILICON WAFERS;

PHOTOCONDUCTIVE DECAY (PCD);

CRYSTAL GROWTH FROM MELT;

EID: 0037395265     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00949-8     Document Type: Conference Paper

References (16)

1. Goodman A.M. J. Appl. Phys. 32:1961;2550.
2. Kunst M., Beck G. J. Appl. Phys. 60:1986;3558.
3. Horanyi T.S., Pavelka T., Tuttö P. Appl. Surf. Sci. 63:1993;306.
4. Ikeda M., Nagayashi H., Onozawa Y., Saitoh T., Kamisako K. Solar Energy Mater. Solar Cells. 48:1997;109.
5. Borghesi A., Pivac B., Sassella A. J. Appl. Phys. 77:1995;4169.
6. Clayes C., Simoen E., Vanhellemont J. J. Phys. III Fr. 7:1997;1469.
7. Akatsuka M., Sueoka K. Jpn. J. Appl. Phys. 40:2001;1240.
8. Yang D., Fan R., Li L., Que D., Sumino K. Appl. Phys. Lett. 68:1996;487.
9. Yang D., Que D., Sumino K. J. Appl. Phys. 77:1995;943.
10. Yang D., Ma X., Fan R., Li D., Zhang J., Li L., Que D., Sumino K. Mater. Sci. Eng. B. 72:2000;121.
11. Yang D., Ma X., Fan R., Zhang J., Li L., Que D. Physica B. 273/274:1999;308.
12. Yang D., Yao H., Que D. Chin. J. Semicond. 15:1994;422.
13. Park B.M., Seo G.H., Kim G. J. Cryst. Growth. 222:2001;74.
14. von Ammon W., Hölzl R., Virbulis J., Dornberger E., Schmolke R., Gräf D. J. Cryst. Growth. 226:2001;19.
15. Yoshioka K., Ishikawa S., Mimura M., Saitoh T. Solar Energy Mater. Solar Cells. 65:2001;453.
16. Hwang J.M., Schroder D.K. J. Appl. Phys. 59:1986;2476.