Features of the semiconductor-metal transition in GaAs at ultrahigh pressures: New intermediate phases

JETP Letters

Volumn 84, Issue 1, 2006, Pages 21-26

  Shchennikov, V V ^a   Ovsyannikov, S V ^a  

^a INSTITUTE OF METAL PHYSICS   (Russian Federation)

Author keywords

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Indexed keywords

EID: 33748308837     PISSN: 00213640     EISSN: 10906487     Source Type: Journal    
DOI: 10.1134/S0021364006130054     Document Type: Article

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