Nucleation and formation of oxygen precipitates in Czochralski grown silicon annealed under uniform stress conditions

Physica B: Condensed Matter

Volumn 253, Issue 1-2, 1998, Pages 131-137

  Antonova, I V ^a   Misiuk, A ^b   Popov, V P ^a   Plotnikov, A E ^a   Surma, B ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

Hydrostatic pressure; Nucleation; Oxygen precipitates; Silicon

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; HYDROSTATIC PRESSURE; NUCLEATION; OXYGEN; PRECIPITATION (CHEMICAL); PRESSURE EFFECTS; TEMPERATURE;

OXYGEN PRECIPITATES; STRESS CONDITIONS;

SILICON;

EID: 0032186870     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(98)00372-X     Document Type: Article

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