Thermoelectric power of polycrystalline Si films prepared by microwave plasma chemical vapour deposition

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 159-161

  Yonekubo, So ^a   Kamimura, Kiichi ^b   Onuma, Yoshiharu ^b  

^a Precision Technology Research Institute of Nagano Prefecture   (Japan)

^b SHINSHU UNIVERSITY   (Japan)

Author keywords

Chemical vapour deposition; Electrical properties and measurements; Sensors; Silicon

Indexed keywords

BORON COMPOUNDS; CHEMICAL VAPOR DEPOSITION; ELECTRIC VARIABLES MEASUREMENT; GRAIN SIZE AND SHAPE; MICROWAVES; PHOSPHORUS COMPOUNDS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILANES; THERMOELECTRICITY; X RAY CRYSTALLOGRAPHY;

DEPOSITION CHAMBER; DIBORANE; FLOW RATE; PHOSPHINE; THERMOELECTROMOTIVE FORCE;

THIN FILMS;

EID: 0030217694     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08600-2     Document Type: Article

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