Thermopower of a p-type Si/Si1-xGex heterostructure

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 19, 2004, Pages

  Possanzini, C ^a   Fletcher, R ^b   Tsaousidou, M ^c   Coleridge, P T ^d   Williams, R L ^d   Feng, Y ^d   Maan, J C ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b QUEEN S UNIVERSITY   (Canada)

^c UNIVERSITY OF PATRAS   (Greece)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

ARTICLE; DIFFUSION COEFFICIENT; ENERGY; LOW TEMPERATURE; MAGNETIC FIELD; MATHEMATICAL ANALYSIS; MOLECULAR INTERACTION; OSCILLATION; PIEZOELECTRICITY; QUANTUM MECHANICS; STRUCTURE ANALYSIS; TEMPERATURE DEPENDENCE; THERMAL ANALYSIS;

EID: 42749106502     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.195306     Document Type: Article

References (32)

1. R. Fletcher, Semicond. Sci. Technol. 14, R1 (1999).
2. B. Tieke, R. Fletcher, U. Zeitler, M. Henini, and J.C. Maan, Phys. Rev. B 58, 2017 (1998).
3. R. Fletcher, M. Tsaousidou, P.T. Coleridge, Z.R. Wasilewski, and Y. Feng, Physica E (Amsterdam) 12, 272 (2002).
4. R. Fletcher, V.M. Pudalov, Y. Feng, M. Tsaousidou, and P.N. Butcher, Phys. Rev. B 56, 12 422 (1997).
5. O.A. Mironov, I.G. Gerleman, P.J. Phillps, E.H.C. Parker, M. Tsaousidou, and P.N. Butcher, Thin Solid Films 294, 182 (1997); S. Agan, O.A. Mironov, M. Tsaousidou, T.E. Whall, E.H.C. Parker, and P.N. Butcher, Microelectron. Eng. 51-52, 527 (2000)
6. O.A. Mironov, I.G. Gerleman, P.J. Phillps, E.H.C. Parker, M. Tsaousidou, and P.N. Butcher, Thin Solid Films 294, 182 (1997); S. Agan, O.A. Mironov, M. Tsaousidou, T.E. Whall, E.H.C. Parker, and P.N. Butcher, Microelectron. Eng. 51-52, 527 (2000)
7. A. Miele, R. Fletcher, E. Zaremba, Y. Feng, C.T. Foxon, and J.J. Harris, Phys. Rev. B 58, 13 181 (1998).
8. M. Tsaousidou, P.N. Butcher, and G.P. Triberis, Phys. Rev. B 65, 165304 (2001).
9. G. Stoger, G. Brunthaler, G. Bauer, K. Ismail, B.S. Meyerson, J. Lutz, and F. Kuchar, Phys. Rev. B 49, 10 417 (1994); Semicond. Sci. Technol. 9, 765 (1994).
10. G. Stoger, G. Brunthaler, G. Bauer, K. Ismail, B.S. Meyerson, J. Lutz, and F. Kuchar, Phys. Rev. B 49, 10 417 (1994); Semicond. Sci. Technol. 9, 765 (1994).
11. Y.H. Xie, R. People, J.C. Bean, and K.W. Wecht, Appl. Phys. Lett. 49, 283 (1986).
12. G. Braithwaite, N.L. Mattey, E.H.C. Parker, T.E. Whall, G. Brunthaler, and G. Bauer, J. Appl. Phys. 81, 6853 (1997).
13. G. Ansaripour, G. Braithwaite, M. Myronov, O.A. Mironov, E.H.C. Parker, and T.E. Whall, Appl. Phys. Lett. 76, 1140 (2000).
14. R. Leturcq, D. L'Hote, R. Tourbot, V. Senz, U. Gennser, T. Ihn, K. Ensslin, G. Dehlinger, and D. Grutzmacher, Europhys. Lett. 61, 499 (2003).
15. M. D'Iorio, R. Stoner, and R. Fletcher, Solid State Commun. 65, 697 (1988).
16. H. Havlova and L. Smrcka, Phys. Status Solidi B 137, 331 (1986).
17. R. Fletcher, V.M. Pudalov, and S. Cao, Phys. Rev. B 57, 7174 (1998).
18. C. Possanzini, R. Fletcher, P.T. Coleridge, Y. Feng, R.L. Williams, and J.C. Maan, Phys. Rev. Lett. 90, 176601 (2003).
19. T. Ando, A.B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
20. P.J. Price, Ann. Phys. (N.Y.) 133, 217 (1981).
21. P.T. Coleridge, R.L. Williams, Y. Feng, and P. Zawadzki, Phys. Rev. B 56, R12 764 (1997).
22. K. Ikeda, R. Fletcher, J.C. Maan, and J. Kossut, Phys. Rev. B 65, 035201 (2002).
23. S.V. Kravchenko, G.V. Kravchenko, J.E. Furneaux, V.M. Pudalov, and M. D'Iorio, Phys. Rev. B 50, 8039 (1994); S.V. Kravchenko, W.E. Mason, G.E. Bowler, J.E. Furneaux, V.M. Pudalov, and M. D'Iorio, ibid. 51, 7038 (1995).
24. S.V. Kravchenko, G.V. Kravchenko, J.E. Furneaux, V.M. Pudalov, and M. D'Iorio, Phys. Rev. B 50, 8039 (1994); S.V. Kravchenko, W.E. Mason, G.E. Bowler, J.E. Furneaux, V.M. Pudalov, and M. D'Iorio, ibid. 51, 7038 (1995).
25. R. Fletcher, V.M. Pudalov, A.D.B. Radcliffe, and C. Possanzini, Semicond. Sci. Technol. 16, 386 (2001).
26. P.T. Coleridge, R. Stoner, and R. Fletcher, Phys. Rev. B 39, 1120 (1989).
27. P.T. Coleridge, A.S. Sachrajda, H. Lafontainr, and Y. Feng, Phys. Rev. B 54, 14 518 (1996).
28. V.V. Karavolas and P.N. Butcher, J. Phys.: Condens. Matter 3, 2597 (1991); X. Zianni and P.N. Butcher, ibid. 6, 2713 (1994).
29. V.V. Karavolas and P.N. Butcher, J. Phys.: Condens. Matter 3, 2597 (1991); X. Zianni and P.N. Butcher, ibid. 6, 2713 (1994).
30. B. L. Gallagher and P. N. Butcher, in Handbook on Semiconductors, edited by P. T. Landsberg (Elsevier, Amsterdam, 1992), Vol. 1, p. 721.
31. R. Fletcher, V.M. Pudalov, Y. Feng, M. Tsaousidou, and P.N. Butcher, Phys. Rev. B 60, 8392 (1999).
32. O. Prus, M. Reznikov, U. Sivan, and V. Pudalov, Phys. Rev. Lett. 88, 016801 (2002).