Thermoelectric properties of Czochralski-grown silicon at high pressure up to 16 GPa

EPJ Applied Physics

Volumn 27, Issue 1-3, 2004, Pages 145-148

  Shchennikov, V V ^a   Gudina, S V ^a   Misiuk, A ^b   Shamin, S N ^a   Ovsyannikov, S V ^a  

^a INSTITUTE OF METAL PHYSICS   (Russian Federation)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CONCENTRATION (PROCESS); ELECTRIC PROPERTIES; ELECTRON ABSORPTION; HEAT TREATMENT; MICROHARDNESS; PHASE TRANSITIONS; PRECIPITATION (CHEMICAL); PRESSURE EFFECTS; SEMICONDUCTOR MATERIALS;

ELEMENTAL SEMICONDUCTORS; METAL-INSULATOR TRANSITIONS AND OTHER ELECTRONIC TRANSITIONS; THERMOELECTRIC AND THERMOMAGNETIC EFFECTS; VALENCE BAND;

THERMODYNAMIC PROPERTIES;

EID: 2142768205     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2004131     Document Type: Conference Paper

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